Growth and canopy structure of rice plant grown under field condition as
affected by Si
Ho Ando, Ken-ichi Kakuda, Hiroshi Fujii, Katsuya Suzuki and Tatsuya Ajiki
Soil Sci. Plant Nutrition 48-3, 429-432 (2002)
There are many reports using solution culture or pot culture that dry matter
and yield production of rice plant are improved by silicon application without
disturbing environmental factors. Limited information concerned about that
topic, however, are available using field grown rice. The purpose of this
study is to evaluate the growth, yield and canopy structure of rice plant
grown under field condition as affected by Si application in the form of
silica gel as a new Si source. The results obtained are as follows;
1) No significant difference in growth of rice plant with and without
Si application was observed. However, higher yield was obtained in Si application
treatment than in no Si application treatment through bigger number of grains
per unit area and higher filled grain percentage.
2) Canopy structure of rice plant was improved by Si application. There
was significant difference in leaf angle (between stem and leaf) of top and
n-1 leaf at maximum number of tiller stage and n-1 leaf at booting stage
of rice plant. Shorter distance between desirable and practical of top leaf
in with-Si treatment than without-Si treatment at maximum number of tiller
stage of rice plant was observed.
3) Relative light intensity was higher in with Si treatment than in without
Si treatment at maximum number of tiller stage of rice plant, irrespective
of plant height. While, lower relative light intensity in higher position
of with Si treatment than without Si treatment was obtained at booting stage
of rice plant. Lower value of light extinction coefficient was observed in
higher dosage of Si appled at maximum number of tiller stage of rice plant.
Key words: canopy structure, field grown rice, leaf angle, light extinction
coefficient, Si application
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